
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
R n , the negative real impedance, is set by C3 and C4
V CC
V CC
0.01 μ F
and is approximately:
[Equation 2]
?
R n = g m ?
? ?
? ?
?
10 ?
0.01 μ F
10 μ H
27pF
where g m = 18mS.
?
? 2 π f ( C 3 + C 03
1
)
? ?
? ? 2 π f ( C 4 + C 04
1
)
?
?
?
30pF
120pF
120pF
1
2
3
4
V CC 1
TANK
FDBK
SHDN
MAX2620
OUT
V CC 2
GND
OUT
8
7
6
5
V CC
0.01 μ F
0.01 μ F
0.01 μ F
OUT
OUT
Using the circuit model of Figure 5, the following exam-
ple describes the design of an oscillator centered at
900MHz.
Choose: L1 = 5nH ±10%
Q = 140
Calculate: R p = Q × 2 π × f × L1
Using Equation 1, solve for varactor capacitance (C D1 ).
C D1 is the capacitance of the varactor when the volt-
age applied to the varactor is approximately at half-
SHDN
51 ?
0.01 μ F
supply (the center of the varactor’s capacitance range).
Assume the following values:
C STRAY = 2.7pF, C17 = 1.5pF, C6 = 1.5pF, C5 = 1.5pF,
C 03 = 2.4pF, C 04 = 2.4pF, C3 = 2.7pF, and C4 = 1pF
X = STATEK AT-3004 10MHz
FUNDAMENTAL MODE CRYSTAL SURFACE MOUNT
C LOAD = 20pF
V CC
The value of C STRAY is based on approximate perfor-
mance of the MAX2620 EV kit. Values of C3 and C4 are
chosen to minimize R n (Equation 2) while not loading
the resonant circuit with excessive capacitance. C 03
and C 04 are parasitic capacitors.
Figure 4. 10MHz Crystal Oscillator
Sample Calculation
According to the electrical model shown in Figure 5, the
resonance frequency can be calculated as:
[Equation 1]
The varactor’s capacitance range should allow for the
desired tuning range. Across the tuning frequency
range, ensure that R s < 1/2 ? R n ?.
The MAX2620’s oscillator is optimized for low-phase-
noise operation. Achieving lowest phase-noise charac-
teristics requires the use of high-Q (quality factor)
components such as ceramic transmission-line type
f O =
2 π L1 ? C STRAY +
( C 3 + C 03 )( C 4 + C 04 )
C 5 n ?
where C n =
1
? C 17 x C D1
? C 17 + C D1
C 3 + C 03 + C 4 + C 04
+ C 6 +
C 5 x C n ?
?
+ C
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